Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor

Short- and long-term neuroplasticity behaviors are key mechanisms for various activities. In this paper, we propose a synaptic transistor with floating-gate (FG) node an amorphous InGaZnO (IGZO) channel layer. The proposed device emulates the functions of both short-term memory (STM) (LTM) through control amplitude number input pulses. STM operated by ion movement in gate dielectrics occurs when is relatively small (< 9 V). LTM storage electrons FG large (>10 addition, as pulses increases, information stored longer time. Our IGZO could be promising solution brain-inspired computing systems.